S.No. | Characterisitics | Thyristor | MOSFET | IGBT |
1. | Type of Device | Minority carrier | Majority carrier | Minority carrier |
2. | Rating | very high Voltage, very high Current | Medium Voltage, high Current | high Voltage, high Current |
3. | Switching frequency | low | very high (~ MHz) | high (~ 100kHz) |
4. | On-state drop | low | higher (increasing) | low |
5. | On-state losses | low | considerable | less than MOSFET |
6. | Gate Drive | Current driven | Voltage driven | Voltage driven |
7. | Driven by | Single pulse | Continous voltage and large IG at switching transition (else more switching time & more switching losses) | Continous voltage and large IG at switching transition (else more switching time & more switching losses) |
8. | Turn-off | Line or forced commutation | gate commutation | gate commutation |
9. | Combination (series) | by voltage equaling circuit | difficult | difficult |
10. | Combination (parallel) | by current equaling circuit | very easy | difficult |
11. | Reliability | Most Robust | Less Robust | Robust |
12. | Breakdown | No second breakdown | less chance of second breakdown | No second breakdown |
13. | Sensitiveness (temperature) | Less sensitive | sensitive | more sensitive |
14. | Thermal Runaway | yes | No | Yes |
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