Comparison of Si, SiC, GaN and Sapphire Power Semiconductor Devices

Power Electronics

Q. Compare suitability of Si, SiC, GaN, and Sapphire being used for Modern Power Semiconductor Devices?

Ans.

S.No. Characterisitcs Si SiC (3H)/SiC (6H) GaN Sapphire
1. Energy gap at 300K (eV) 1.12 2.23/2.9 3.2 5.47
2. Maximum operating temperature (°C) 300 873/1240 600 1100
3. Mobility at 300 K

— electron

— Hole

 

1350

430

 

1000/600

70

 

440

—–

130-2010
4. Breakdown electric field 0.25 – 0.3 4 3.3 10
5. Melting point (°C) 1414 > 1800 > 2800 3500
6. Thermal Conductivity (W/m-K) 149 500 130 2000
7. Life time of carrier drift region (ns) 1200 40 7 7

 

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