Comparison of Si, SiC, GaN and Sapphire Power Semiconductor Devices
Q. Compare suitability of Si, SiC, GaN, and Sapphire being used for Modern Power Semiconductor Devices? Ans. S.No. Characterisitcs Si SiC (3H)/SiC (6H) GaN Sapphire 1. Energy gap at 300K (eV) 1.12 2.23/2.9 3.2 5.47 2. Maximum operating temperature (°C) 300 873/1240 600 1100 3. Mobility at 300 K — electron — Hole 1350 430 … Read more