MOSFET MCQ

21. Using which of the following technologies, the charge devices are implemented?

  1. MOS technology
  2. CMOS technology
  3. PMOS technology
  4. NMOS technology
Answer
Answer. a

21. Select the correct statement from given answer choices

  1. a power MOSFET is a current-controlled device and BJT is a voltage-controlled device
  2. a power MOSFET is a voltage-controlled device and BJT is a current-controlled device
  3. both power MOSFET and BJT are current-controlled devices
  4. both power MOSFET and BJT are voltage-controlled devices
Answer
Answer. b

22. What is the required connection for an enhancement type N-MOSFET to function as a resistor?

  1. gate connected to source
  2. gate connected to drain
  3. drain connected to source
  4. source open-circuited
Answer
Answer. b

23. In a P-channel MOSFET the substrate is

  1. P-type
  2. N-type
  3. P-type or N-type
  4. None of the above
Answer
Answer. b

24. A power MOSFET is a

  1. voltage-controlled device
  2. both voltage-controlled device and current-controlled device
  3. current-controlled device
  4. none of these
Answer
Answer. a

25. The threshold voltage of an n-channel enhancement-mode MOSFET is 0.5V. When the device is biased at a gate voltage of 3V, pinch-off would occur at a drain voltage of

  1. 1.5V
  2. 2V
  3. 2.5V
  4. 3V
Answer
Answer. c

26. The threshold voltage of an n-channel MOSFET can be increased by

  1. increasing the channel doping concentration
  2. reducing the channel doping concentration
  3. reducing the gate oxide thickness
  4. reducing the channel length
Answer
Answer. b

27. __________ is not a current triggered device.

  1. Thyristor
  2. GTO
  3. TRIAC
  4. MOSFET
Answer
Answer. d

28. A switched mode power supply operating at 20 kHz to 100 kHz range uses _________ as the main switching element.

  1. Thristor
  2. MOSFET
  3. Triac
  4. UJT
Answer
Answer. b
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