BJT MCQ

1. Transistors were used in

  1. First-generation computing devices
  2. Second-generation computing devices
  3. Third-generation computing devices
  4. Fourth-generation computing devices
Answer
Answer. b

2. For normal operation of a transistor, the collector-base junction is

  1. Always reverse biased
  2. Always forward biased
  3. Is grounded
  4. Unbiased
Answer
Answer. a

3. Which of the statements given below is/are correct?

  1. BJT is a current controlled device with high input impedance and high gain bandwidth
  2. UJT is a positive resistance device and used as an oscillator
  3. FET is a voltage-controlled device with high input impedance and low gain bandwidth.
  4. BJT, FET, UJT can all be used for amplification
  1. 1 and 2
  2. 1 and 3
  3. 2 and 4
  4. only 3
Answer
Answer. d

4. If two identical transistors each having a current gain of 50 is connected in Darlington connection, the current gain of the connection will be

  1. 625
  2. 2250
  3. 500
  4. 2500
Answer
Answer. d

5. BJT has _________ input impedance and _________ output impedance.

  1. Low, low
  2. Low, high
  3. High, low
  4. High, high
Answer
Answer. b

6. Conventional flow of current in a P-N-P transistor is from

  1. Emitter to base
  2. Base to emitter
  3. Base to collector
  4. Emitter to collector
Answer
Answer. a

7. In a BJT, collector region width is maximum when it

  1. collects the maximum number of charge carrier
  2. reduces heat dissipation per unit area

Out of these

  1. Only 1 is correct
  2. Only 2 is correct
  3. Both 1 and 2 are correct
  4. Neither 1 nor 2 incorrect
Answer
Answer. c

8. In the active region of a transistor, collector-base junction is _________ biased.

  1. Forward, forward
  2. Reverse, reverse
  3. Reverse, forward
  4. Forward, reverse
Answer
Answer. c

9. The purpose of gold doping is for

  1. Collector region of a BJT to used as a switch
  2. Increasing collector current to use as a power amplifier
  3. Reducing the lifetime of charge carriers
  4. Collector region of a BJT to use as a switch and reducing the lifetime of charge carriers
Answer
Answer. d

10. In a BJT, when both junctions are forward biased then the operating mode is called

  1. Reverse active mode
  2. Forward active mode
  3. Saturation mode
  4. Cut-off mode
Answer
Answer. c

11. Following methods are used to increase the input resistance of a common emitter state (BJT). Arrange these methods in descending order of effectiveness.

  1. Un-bypassing emitter resistance
  2. Bootstrapping
  3. Biasing it at low quiescent current
  4. Using compounded BJTs
  1. 2>4>1>3
  2. 4>3>2>1
  3. 2>4>3>1
  4. 4>2>3>1
Answer
Answer. b

12. Base-bias is associated with

  1. Amplifiers
  2. Switching circuits
  3. Stable Q-point
  4. Fixed emitter current
Answer
Answer. b

13. If a transistor operates at the middle of the load line, a decrease in the current gain will move the Q-point

  1. Down
  2. Up
  3. Nowhere
  4. Off the load line
Answer
Answer. a

14. The current gain of a transistor is defined as the ratio of the collector current to the

  1. Base current
  2. Emitter current
  3. Supply current
  4. Collector current
Answer
Answer. a

15. A transistor is said to be in a quiescent stage when

  1. Emitter junction bias is just equal to the collector
  2. No current is flowing
  3. No signal is applying to the input
  4. It is biased
Answer
Answer. c

16. In transistor configuration producing highest output resistance is

  1. CC
  2. CB
  3. CE
  4. None of these
Answer
Answer. b

17. Transistor is a

  1. Current control current device
  2. Current control voltage device
  3. Voltage control current device
  4. Voltage control voltage device
Answer
Answer. a

18. The emitter region in N-P-N junction transistor is more heavily doped than the base region so that

  1. The flow across the base region will be mainly due to electrons
  2. The flow across the base region will be mainly due to holes
  3. Base current will be high
  4. There will be increase recombination in the base region
Answer
Answer. a

19. β of a transistor can exceed

  1. 1
  2. 0.1
  3. 0.01
  4. 0
Answer
Answer. a

20. The α of a transistor should be

  1. 1
  2. 0.99
  3. 20
  4. 0.01
Answer
Answer. b
error: Content is protected !!

Adblocker detected! Please consider reading this notice.

We've detected that you are using AdBlock Plus or some other adblocking software which is preventing the page from fully loading.

We don't have any banner, Flash, animation, obnoxious sound, or popup ad. We do not implement these annoying types of ads!

We need fund to operate the site, and almost all of it comes from our online advertising.

Please add electricalvoice.com to your ad blocking whitelist or disable your adblocking software.

×