Q. Compare suitability of Si, SiC, GaN, and Sapphire being used for Modern Power Semiconductor Devices?

Ans.

S.No. Characterisitcs Si SiC (3H)/SiC (6H) GaN Sapphire
1. Energy gap at 300K (eV) 1.12 2.23/2.9 3.2 5.47
2. Maximum operating temperature (°C) 300 873/1240 600 1100
3. Mobility at 300 K

— electron

— Hole

 

1350

430

 

1000/600

70

 

440

—–

130-2010
4. Breakdown electric field 0.25 – 0.3 4 3.3 10
5. Melting point (°C) 1414 > 1800 > 2800 3500
6. Thermal Conductivity (W/m-K) 149 500 130 2000
7. Life time of carrier drift region (ns) 1200 40 7 7

 

Comparison of Si, SiC, GaN and Sapphire Power Semiconductor Devices

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