Q. Compare suitability of Si, SiC, GaN, and Sapphire being used for Modern Power Semiconductor Devices?
Ans.
| S.No. | Characterisitcs | Si | SiC (3H)/SiC (6H) | GaN | Sapphire |
| 1. | Energy gap at 300K (eV) | 1.12 | 2.23/2.9 | 3.2 | 5.47 |
| 2. | Maximum operating temperature (°C) | 300 | 873/1240 | 600 | 1100 |
| 3. | Mobility at 300 K
— electron — Hole |
1350 430 |
1000/600 70 |
440 —– |
130-2010 |
| 4. | Breakdown electric field | 0.25 – 0.3 | 4 | 3.3 | 10 |
| 5. | Melting point (°C) | 1414 | > 1800 | > 2800 | 3500 |
| 6. | Thermal Conductivity (W/m-K) | 149 | 500 | 130 | 2000 |
| 7. | Life time of carrier drift region (ns) | 1200 | 40 | 7 | 7 |
