BJT MCQ

91. In a bipolar junction transistor, the current gain β.

  1. Does not change with the change in temperature
  2. Increases exponentially with the increase in temperature
  3. Decreases with the increase in temperature
  4. Increases with the increase in temperature
Answer
Answer. d

92. The value of hie in ohms for a BJT with Ic =3mA, VT = 25mV and hfe = 150 is

  1. 200 ohm
  2. 1300 ohm
  3. 1250 ohm
  4. 125 ohm
Answer
Answer. c

93. In a bipolar junction transistor, the current gain in common emitter configuration is

  1. IE/IC
  2. IB/IC
  3. IC/IB
  4. IE/IB
Answer
Answer. c

94. The value of Rb for the desired Q- point (5mA, 5V) in the circuit, shown below using silicon transistor will be

  1. 1 kΩ
  2. 47 kΩ
  3. 43 kΩ
  4. 122 kΩ
Answer
Answer. c

95. Thermal runaway in a transistor biased in the active range is due to

  1. Heating the transistor
  2. Changes in β which increase with temperature
  3. Base emitter voltage VBE which decreases with rise in temperature
  4. Change in reverse collector saturation current due to rise in temperature
Answer
Answer. d

96. α-cut off frequency of bipolar junction transistor increase

  1. With the increase in base width
  2. With the increase in collector width
  3. With the increase in temperature
  4. With the decrease in base width
Answer
Answer. a

97. β gain of the transistor signifies

  1. Amplification capability of the transistor
  2. Rectification capability of the transistor
  3. Regulation capability
  4. All options are correct
Answer
Answer. a

98. Transistor can be used to

  1. Amplify current
  2. Amplify voltage
  3. Amplify power
  4. All options are correct
Answer
Answer. d

99. Input resistance is least in the case of ________ configuration of transistors.

  1. CE
  2. CB
  3. CC
  4. CC or CE
Answer
Answer. b

100. An emitter is generally called

  1. Anode
  2. Cathode
  3. Grid
  4. Drain
Answer
Answer. a
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