BJT MCQ

31. For highest power gain, what configuration is used

1. CC
2. CE
3. CB
4. CS

32. The power dissipation in a transistor is the product of

1. Emitter current and emitter to base voltage
2. Collector current and collector to base voltage
3. Emitter current and collector to emitter voltage
4. None of the above

33. The current gain of a common-emitter transistor is 50. The change in emitter current for a corresponding change of 5 mA in base current will be

1. 50 mA
2. 55 mA
3. 250 mA
4. 255 mA

34. Improper biasing of a transistor circuit leads to

1. Excessive heat production in collector
2. Faulty location of load line
3. Heavy loading of emitter
4. Distortion in output signal

35. Transistor can be operated in

1. Active region only
2. Cut-off region only
3. Saturation region only
4. All of the above

36. The emitter is at AC ground in a

1. CB stage
2. CE stage
3. CC stage
4. None of these

37. In a transistor, if electrons flow into the emitter,

1. Holes flow out of the emitter
2. Holes flow out of the collector
3. Electron flows into the collector
4. Electron flows out of the collector

38. Unijunction transistor is mostly used as a

1. Voltage regulator
2. Current regulator
3. Oscillator
4. Filter

39. Which of the following transistor parameter is temperature-dependent?

1. Reverse saturation current
2. Base emitter voltage
3. Current gain
4. All of the above

40. What is the typical value of V_BE set in PNP Ge transistor?

1. 0.1 volt
2. (−0.3 volt)
3. (−0.2 volt)
4. 0.2 volt