Q. Match the items given in List I and those in List II. Select your answers using the codes given in the question.
| List I | List II |
| Type of device | Characteristic/Application |
| A. MOSFET | 1. Turn off by negative gate |
| B. GTO | 2. Bidirectional switching |
| C. UJT | 3. High speed switching |
| D. TRIAC | 4. Triggering circuit |
Codes: A B C D
(a) 3 1 4 2
(b) 2 3 1 4
(c) 2 4 1 3
(d) 3 1 2 4
Q. Match the items given in List I and those in List II. Select your answers using the codes given in the question.
| List I | List II |
| P-N junction diodes | bias condition in normal mode of operation |
| A. Zener diode | 1. Forward bias |
| B. Solar cell | 2. Reverse bias |
| C. LASER diode | |
| D. Avalanche photodiode |
Codes: A B C D
(a) 1 2 1 2
(b) 2 1 1 2
(c) 2 2 2 1
(d) 2 1 2 2
Q. Match the items given in List I and those in List II. Select your answers using the codes given in the question.
| List I | List II |
| Semiconductor Devices | Characteristic/Property |
| A. BJT | 1. Population inversion |
| B. MOS Capacitor | 2. Pinch-off voltage |
| C. LASER diode | 3. Early effect |
| D. JFET | 4. Flat-band voltage |
Codes: A B C D
(a) 3 1 4 2
(b) 1 4 3 2
(c) 3 4 1 2
(d) 3 2 1 4
